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SIMLAB-8051
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1. Field of the Invention
The invention relates to a bipolar transistor and a method for fabricating the same.
2. Description of the Related Art
As the mobile communication of a narrow frame system has become the mainstream of the mobile communication as, the mobile communication has gradually become the mainstream of the public communication system in recent years.
For the required mobile communication of the narrow frame system, the transmission of a high electric current and the low power consumption for transmission are required. In a mobile communication transmitting device, when forming a base layer of a bipolar transistor, it is preferable to utilize a method of utilizing a refractory metal silicide layer to reduce the electrical resistance.
For example, Japanese Patent Application Publication No. 2011-287784 (JP-A-2011-287784) describes the use of a titanium silicide (TiSi) layer as a base layer for a bipolar transistor. However, the titanium silicide layer has a high work function (about 4.8 eV or more). Accordingly, when a compound semiconductor (such as an n-type GaN or InGaN compound semiconductor, or an n-type GaAs or InGaAs compound semiconductor), which has a low work function (less than 4.8 eV), is used for a base layer, the base layer cannot be formed with the base layer. In this way, a titanium silicide layer is not suitable as a base layer for a bipolar transistor.
Japanese Patent Application Publication No. 2000-260245 (JP-A-2000-260245) describes the use of an iridium silicide (IrSi) layer as a base layer for a bipolar transistor. In a bipolar transistor described in JP-A-2000-260245, an emitter region is formed of a compound semiconductor containing aluminum (Al), and the emitter region is alloyed with an IrSi layer below it.
When a titanium silicide layer or an iridium silicide layer is used as a base layer, the emitter region is formed in the base layer, and the base layer is formed in a drift region of the bipolar transistor. It is preferable to use a method for forming an emitter region and a base layer in the respective base layer from the viewpoint of the uniformity of the distribution of the electrical resistance. It is difficult to form an emitter region and
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